@techreport{oai:jaxa.repo.nii.ac.jp:00002159,
 author = {木下, 恭一 and 植田, 稔晃 and 足立, 聡 and 荒井, 康智 and 依田, 眞一 and Kinoshita, Kyoichi and Ueda, Toshiaki and Adachi, Satoshi and Arai, Yasutomo and Yoda, Shinichi},
 month = {Feb},
 note = {We have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.08-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. This year we studied scale up of platy crystals for commercialization of laser diodes as well as improvement of crystal quality. A 30 mm wide In(0.09)Ga(0.91)As single crystal having high quality area larger than 15 x 40 sq mm was grown. Simultaneous two platy crystals growth was also successful. These results show scale up of platy crystals and mass production of substrates are possible in principle without the change of growth configuration., 資料番号: AA0063801000, レポート番号: JAXA-RR-07-015E},
 title = {Scale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates},
 year = {2008}
}