{"created":"2023-06-20T14:35:52.838138+00:00","id":2159,"links":{},"metadata":{"_buckets":{"deposit":"d090fd69-c104-478c-b56e-6db7eb1f745c"},"_deposit":{"created_by":1,"id":"2159","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2159"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00002159","sets":["1887:1893","9:10:147:185"]},"author_link":["3838","3840","3844","3842","3845","3837","3836","3839","3841","3843"],"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-02-29","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"JAXA-RR-07-015E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構研究開発報告"},{"bibliographic_title":"JAXA Research and Development Report","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"We have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.08-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. This year we studied scale up of platy crystals for commercialization of laser diodes as well as improvement of crystal quality. A 30 mm wide In(0.09)Ga(0.91)As single crystal having high quality area larger than 15 x 40 sq mm was grown. Simultaneous two platy crystals growth was also successful. These results show scale up of platy crystals and mass production of substrates are possible in principle without the change of growth configuration.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0063801000","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-RR-07-015E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-1113","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA1192675X","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"植田, 稔晃"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"足立, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"荒井, 康智"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 眞一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ueda, Toshiaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Adachi, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Arai, Yasutomo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-15"}],"displaytype":"detail","filename":"63801000.pdf","filesize":[{"value":"932.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"63801000.pdf","url":"https://jaxa.repo.nii.ac.jp/record/2159/files/63801000.pdf"},"version_id":"b450ae38-c115-4959-ad63-99b04d278832"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"インジウムガリウム砒化物","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"板晶","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体レーザ","subitem_subject_scheme":"Other"},{"subitem_subject":"溶融帯移動法","subitem_subject_scheme":"Other"},{"subitem_subject":"スケールアップ","subitem_subject_scheme":"Other"},{"subitem_subject":"改良","subitem_subject_scheme":"Other"},{"subitem_subject":"対流","subitem_subject_scheme":"Other"},{"subitem_subject":"indium gallium arsenide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"platy crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor laser","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus zone method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"scale up","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"improvement","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"convection","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Scale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Scale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["185","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"2159","relation_version_is_last":true,"title":["Scale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T09:27:38.600665+00:00"}