@article{oai:jaxa.repo.nii.ac.jp:00021756,
 author = {早川, 泰弘 and Nirmal, Kumar  Velu and Arivanandhan, Mukannan and Rajesh, Govindasamy and 小山, 忠信 and 百瀬, 与志美 and 阪田, 薫穂 and 小澤, 哲夫 and 岡野, 泰則 and 稲富, 裕光 and Hayakawa, Yasuhiro and Nirmal, Kumar  Velu and Arivanandhan, Mukannan and Rajesh, Govindasamy and Koyama, Tadanobu and Momose, Yoshimi and Sakata, Kaoruho and Ozawa, Tetsuo and Okano, Yasunori and Inatomi, Yuko},
 issue = {1},
 journal = {International Journal of Microgravity Science and Application (IJMSA)},
 month = {Jan},
 note = {The manuscript reviews the microgravity experiments carried out onboard the International Space Station (ISS) to study the effects of gravity and orientation on the dissolution and growth properties of InGaSb ternary alloys. To study the effect of gravity, similar growth experiments were conducted under microgravity and normal gravity conditions. The effect of orientation was studied by the growth of InGaSb from (111)A and (111)B faces of GaSb (Ga and Sb faces) under microgravity onboard the ISS. The experimental results revealed that the growth rate was higher with better quality of crystal under microgravity than normal gravity. A model was proposed to explain the higher dissolution of GaSb (111)B than (111)A direction under microgravity. The higher growth rate of InGaSb from GaSb (111)B was found to be because of its higher dissolution of GaSb(111)B feed., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: DS1740126000},
 pages = {340111-1--340111-12},
 title = {Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors: Experiments at the International Space Station and on Earth},
 volume = {34},
 year = {2017}
}