@techreport{oai:jaxa.repo.nii.ac.jp:00002221,
 author = {木下, 恭一 and 植田, 稔晃 and 足立, 聡 and 荒井, 康智 and 宮田, 浩旭 and 田中, 涼太 and 村松, 祐治 and 依田, 眞一 and Kinoshita, Kyoichi and Ueda, Toshiaki and Adachi, Satoshi and Arai, Yasutomo and Miyata, Hiroaki and Tanaka, Ryota and Muramatsu, Yuji and Yoda, Shinichi},
 month = {Mar},
 note = {We have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.1-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. Among factors which affect crystal quality, the most influential factor is temperature stability at the growth region when the composition of grown crystals is in the range between In(0.1)Ga(0.9)As and In(0.13)Ga(0.87)As; when the temperature stability was better than +/- 0.1 C, compositional uniformity was 0.13 with sigma of 0.001 where sigma is the standard deviation, and 0.13 with sigma of 0.006 when the temperature stability was +/- 0.2 C. The appropriate temperatures at the feed region were between 1,170 and 1,180 C. Temperature gradient also affected crystal quality through the variation of growth rate. Temperature gradients chosen for high quality crystal growth were in the range between 25 and 28 C/cm, which were measured outside of quartz ampoules. Finally, In(0.13)Ga(0.87)As single crystals having high quality area larger than 10 x 30 sq mm were reproducibly grown. Such large and high quality bulk single crystals which can be used as substrates of laser diodes operating at the wavelength of 1.3 micrometers were grown for the first time., 資料番号: AA0063221000, レポート番号: JAXA-RR-06-014E},
 title = {High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates},
 year = {2007}
}