{"created":"2023-06-20T14:35:55.548999+00:00","id":2221,"links":{},"metadata":{"_buckets":{"deposit":"a10a1ec1-67a1-45b1-bc1f-2df98e221138"},"_deposit":{"created_by":1,"id":"2221","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2221"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00002221","sets":["1887:1893","9:10:200:239"]},"author_link":["4411","4419","4407","4412","4405","4410","4417","4414","4406","4415","4409","4404","4408","4413","4416","4418"],"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03-30","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"JAXA-RR-06-014E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構研究開発報告"},{"bibliographic_title":"JAXA Research and Development Report","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"We have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.1-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. Among factors which affect crystal quality, the most influential factor is temperature stability at the growth region when the composition of grown crystals is in the range between In(0.1)Ga(0.9)As and In(0.13)Ga(0.87)As; when the temperature stability was better than +/- 0.1 C, compositional uniformity was 0.13 with sigma of 0.001 where sigma is the standard deviation, and 0.13 with sigma of 0.006 when the temperature stability was +/- 0.2 C. The appropriate temperatures at the feed region were between 1,170 and 1,180 C. Temperature gradient also affected crystal quality through the variation of growth rate. Temperature gradients chosen for high quality crystal growth were in the range between 25 and 28 C/cm, which were measured outside of quartz ampoules. Finally, In(0.13)Ga(0.87)As single crystals having high quality area larger than 10 x 30 sq mm were reproducibly grown. Such large and high quality bulk single crystals which can be used as substrates of laser diodes operating at the wavelength of 1.3 micrometers were grown for the first time.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0063221000","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-RR-06-014E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-1113","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA1192675X","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"植田, 稔晃"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"足立, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"荒井, 康智"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宮田, 浩旭"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"田中, 涼太"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"村松, 祐治"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 眞一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ueda, Toshiaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Adachi, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Arai, Yasutomo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Miyata, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tanaka, Ryota","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Muramatsu, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-15"}],"displaytype":"detail","filename":"63221000.pdf","filesize":[{"value":"4.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"63221000.pdf","url":"https://jaxa.repo.nii.ac.jp/record/2221/files/63221000.pdf"},"version_id":"23539df2-4a84-45c6-b712-0cf9ae2841ba"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"飽和溶融帯移動法","subitem_subject_scheme":"Other"},{"subitem_subject":"TLD法","subitem_subject_scheme":"Other"},{"subitem_subject":"インジウムガリウム砒素","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体レーザ","subitem_subject_scheme":"Other"},{"subitem_subject":"基板","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"液相線","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶性","subitem_subject_scheme":"Other"},{"subitem_subject":"濃度プロファイル","subitem_subject_scheme":"Other"},{"subitem_subject":"温度安定性","subitem_subject_scheme":"Other"},{"subitem_subject":"対流","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus-zone method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"TLZ method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"indium gallium arsenide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor laser","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"substrate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"liquidus","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystallinity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"concentration profile","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature stability","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"convection","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["239","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"2221","relation_version_is_last":true,"title":["High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T09:26:25.572034+00:00"}