@article{oai:jaxa.repo.nii.ac.jp:00022411,
 author = {川北, 史朗 and 今泉, 充 and 石塚, 尚吾 and 柴田, 肇 and 仁木, 栄 and 奥田, 修一 and 艸分, 宏昌 and Kawakita, Shirou and Imaizumi, Mitsuru and Ishizuka, Shogo and Shibata, Hajime and Niki, Shigeru and Okuda, Shuichi and Kusawake, Hiroaki},
 issue = {5S1},
 journal = {Japanese Journal of Applied Physics（JJAP）},
 month = {Apr},
 note = {Cu(In,Ga)Se2 (CIGS) solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cells, to reveal created radiation defects. The electron irradiation increased electroluminescence (EL) emission intensity from the CIGS cells with similar behavior to light soaking. A hundred keV electrons also increased the EL intensity without producing displacement defects. Both the 100 and 250 keV electrons increased the effective acceptor density and improved cell performance. Since these phenomena have been reported as a light-soaking effect for CIGS solar cells, electron radiation effects with less than 250 keV for CIGS solar cells are thought to be equivalent to the light-soaking effect., 資料番号: PA1410046000},
 pages = {05FW08-1--05FW08-4},
 title = {Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se2 solar cells},
 volume = {53},
 year = {2014}
}