{"created":"2023-06-20T14:54:14.922986+00:00","id":22543,"links":{},"metadata":{"_buckets":{"deposit":"6441ebf6-84cd-4d7b-88e5-1b0172cdb976"},"_deposit":{"created_by":1,"id":"22543","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"22543"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00022543","sets":["1887:1888"]},"author_link":["211265","211266","211268","211267","211264"],"item_7_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"1928","bibliographicPageStart":"1924","bibliographicVolumeNumber":"61","bibliographic_titles":[{},{"bibliographic_title":"IEEE Transactions on Nuclear Science","bibliographic_titleLang":"en"}]}]},"item_7_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Radiation effects were demonstrably observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiation. For higher LET ions, permanent damage (increase in both drain and gate leakage current) was observed similar to SiC Schottky Barrier diodes in our previous study. For lower LET ions, including protons, Single Event Burnouts (SEBs) were observed and there was no leakage current increase just before SEBs. The phenomenon is unique for SiC devices.","subitem_description_type":"Other"}]},"item_7_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: PA1510043000","subitem_description_type":"Other"}]},"item_7_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Electrical and Electronics Engineers, Inc.(IEEE)"}]},"item_7_relation_25":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"info:doi/10.1109/TNS.2014.2336911"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1109/TNS.2014.2336911","subitem_relation_type_select":"DOI"}}]},"item_7_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0018-9499","subitem_source_identifier_type":"ISSN"}]},"item_7_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00667999","subitem_source_identifier_type":"NCID"}]},"item_7_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency(JAXA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency(JAXA"},{"subitem_text_language":"en","subitem_text_value":"-"},{"subitem_text_language":"en","subitem_text_value":"-"},{"subitem_text_language":"en","subitem_text_value":"-"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Mizuta, Eiichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kuboyama, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Abe, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwata, Yoshiyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tamura, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Heavy ions","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SiC","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"power MOSFETs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"radiation damage","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon carbide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single-event effects","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs","subitem_title_language":"en"}]},"item_type_id":"7","owner":"1","path":["1888"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-07-14"},"publish_date":"2015-07-14","publish_status":"0","recid":"22543","relation_version_is_last":true,"title":["Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T03:19:26.740651+00:00"}