@article{oai:jaxa.repo.nii.ac.jp:00022900,
 author = {水田, 栄一 and 久保山, 智司 and 仲田, 祐希 and 武山, 昭憲 and 大島, 武 and 岩田, 佳之 and 鈴木, 浩一 and Mizuta, Eiichi and Kuboyama, Satoshi and Nakada, Yuki and Takeyama, Akinori and Ohshima, Takeshi and Iwata, Yoshiyuki and Suzuki, Koichi},
 issue = {8},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Mar},
 note = {形態: カラー図版あり, Physical characteristics: Original contains color illustrations, Accepted: 2018-03-12, 資料番号: PA1810051000},
 pages = {1956--1963},
 title = {Single-Event Damage observed in GaN-on-Si HEMTs for Power Control Applications},
 volume = {65},
 year = {2018}
}