{"created":"2023-06-20T14:54:31.481499+00:00","id":22900,"links":{},"metadata":{"_buckets":{"deposit":"dc72c60f-00a8-445b-8f13-15f615f8617e"},"_deposit":{"created_by":1,"id":"22900","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"22900"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00022900","sets":["1887:1888"]},"author_link":["215121","215118","215125","215114","215122","215115","215123","215124","215126","215120","215117","215116","215119","215127"],"item_7_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-03-27","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"1963","bibliographicPageStart":"1956","bibliographicVolumeNumber":"65","bibliographic_titles":[{},{"bibliographic_title":"IEEE Transactions on Nuclear Science","bibliographic_titleLang":"en"}]}]},"item_7_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: カラー図版あり","subitem_description_type":"Other"}]},"item_7_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains color illustrations","subitem_description_type":"Other"},{"subitem_description":"Accepted: 2018-03-12","subitem_description_type":"Other"}]},"item_7_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: PA1810051000","subitem_description_type":"Other"}]},"item_7_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Electrical and Electronics Engineers (IEEE)"}]},"item_7_relation_25":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"info:doi/10.1109/TNS.2018.2819990"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1109/TNS.2018.2819990","subitem_relation_type_select":"DOI"}}]},"item_7_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0018-9499","subitem_source_identifier_type":"ISSN"}]},"item_7_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構研究開発部門(JAXA)"},{"subitem_text_value":"宇宙航空研究開発機構研究開発部門(JAXA)"},{"subitem_text_value":"宇宙航空研究開発機構研究開発部門(JAXA)"},{"subitem_text_value":"量子科学技術研究開発機構量子ビーム科学研究部門高崎量子応用研究所"},{"subitem_text_value":"量子科学技術研究開発機構量子ビーム科学研究部門高崎量子応用研究所"},{"subitem_text_value":"量子科学技術研究開発機構放射線医学総合研究所"},{"subitem_text_value":"宇宙航空研究開発機構研究開発部門(JAXA)"}]},"item_7_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency (JAXA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency (JAXA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency (JAXA)"},{"subitem_text_language":"en","subitem_text_value":"Takasaki Advanced Radiation Research Institute,National Institutes for Quantum and Radiological Science and Technology"},{"subitem_text_language":"en","subitem_text_value":"Takasaki Advanced Radiation Research Institute,National Institutes for Quantum and Radiological Science and Technology"},{"subitem_text_language":"en","subitem_text_value":"National Institute of Radiological Sciences, National Institutes for Quantum and Radiological Science and Technology"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"水田, 栄一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"久保山, 智司"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"仲田, 祐希"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岩田, 佳之"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鈴木, 浩一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mizuta, Eiichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kuboyama, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakada, Yuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwata, Yoshiyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Suzuki, Koichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Field-effect transistor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium nitride (GaN)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gate injection transistor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"normally off","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"power device","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Single-Event Damage observed in GaN-on-Si HEMTs for Power Control Applications","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Single-Event Damage observed in GaN-on-Si HEMTs for Power Control Applications","subitem_title_language":"en"}]},"item_type_id":"7","owner":"1","path":["1888"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-09-28"},"publish_date":"2018-09-28","publish_status":"0","recid":"22900","relation_version_is_last":true,"title":["Single-Event Damage observed in GaN-on-Si HEMTs for Power Control Applications"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T03:13:46.038996+00:00"}