@article{oai:jaxa.repo.nii.ac.jp:00023043,
 author = {久保山, 智司 and 水田, 栄一 and 仲田, 祐希 and 新藤, 浩之 and Kuboyama, Satoshi and Mizuta, Eiichi and Nakada, Yuki and Shindou, Hiroyuki},
 issue = {7},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Mar},
 note = {形態: カラー図版あり, Physical characteristics: Original contains color illustrations, Accepted: 2019-02-21, 資料番号: PA1910060000},
 pages = {1710--1714},
 title = {Physical Analysis of Damage Sites Introduced by SEGR in Silicon Vertical Power MOSFETs and Implications for Postirradiation Gate-Stress Test},
 volume = {66},
 year = {2019}
}