@article{oai:jaxa.repo.nii.ac.jp:00023044,
 author = {久保山, 智司 and 水田, 栄一 and 仲田, 祐希 and 新藤, 浩之 and Michez, Alain and Boch, Jerome and Saigne, Frederic and Touboul, Antoine and Kuboyama, Satoshi and Mizuta, Eiichi and Nakada, Yuki and Shindou, Hiroyuki and Michez, Alain and Boch, Jerome and Saigne, Frederic and Touboul, Antoine},
 issue = {7},
 journal = {IEEE Transactions on Nuclear Science},
 month = {May},
 note = {形態: カラー図版あり, Physical characteristics: Original contains color illustrations, Accepted: 2019-04-25, 資料番号: PA1910061000},
 pages = {1688--1693},
 title = {Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions},
 volume = {66},
 year = {2019}
}