{"created":"2023-06-20T14:36:00.640183+00:00","id":2306,"links":{},"metadata":{"_buckets":{"deposit":"00dd5d07-619f-408c-bff8-10a76241bc74"},"_deposit":{"created_by":1,"id":"2306","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2306"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00002306","sets":["1887:1893","9:10:309:311"]},"author_link":["5179","5185","5178","5183","5186","5187","5180","5182","5184","5177","5176","5181"],"item_3_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Morphological stability of semiconductor crystal in solution growth"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-03-31","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"JAXA-RR-04-055","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構研究開発報告"},{"bibliographic_title":"JAXA Research and Development Report","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"本報告では、半導体結晶の溶液成長過程における以下の研究成果を述べる。(1)半導体結晶の溶液成長過程における固液界面の形態変化に及ぼす基板結晶の面方位の影響を調べるために近赤外顕微鏡を使ったその場観察実験が実施された。その結果、対流を抑制することでGaP/GaP成長界面のステップカイネティクス係数の面方位依存性が得られ、結晶成長時におけるマクロステップの挙動が評価された。また、GaAs(x)P(1-x)/GaPへテロLPE成長初期の固液界面の表面形態変化が基板表面の面方位依存性の視点から議論された。(2)静磁場THM法によりTe溶液から育成したCdZnTe結晶の成長界面が急冷法によって調べられた。その結果、浮力対流を抑制することで速い引き下げ速度でも良質なCdZnTe成長結晶を得られることを示した。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The following results are described in the present report. (1) In situ observation experiments of semiconductor solution growth using a near-infrared microscope have been performed to investigate an influence of surface orientation of a substrate crystal upon the morphological change of the solid/liquid (S/L) interface. The orientation dependence of step kinetic coefficient at the interface in GaP/GaP growth was obtained under a reduced convection condition in order to evaluate a behavior of macrosteps during the growth. A morphological change of a S/L interface at the early stage of GaAsxP1-x/GaP hetero-LPE growth was also discussed from the view point of the surface orientation dependence. (2) A S/L interface of a CdZnTe crystal grown from Te solution with a traveling heater method under a static magnetic field was investigated by a quenching technique during the crystal growth. The results shows that a high quality CdZnTe crystal can be obtained even with high growth rate by damping the buoyancy convection.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0048516000","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-RR-04-055","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-1113","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA1192675X","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"Kunming Institute of Physics"},{"subitem_text_value":"東海大学"},{"subitem_text_value":"アイ・エイチ・アイ・エアロスペース"},{"subitem_text_value":"東海大学"},{"subitem_text_value":"東海大学"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Kunming Institute of Physics"},{"subitem_text_language":"en","subitem_text_value":"Tokai University"},{"subitem_text_language":"en","subitem_text_value":"IHI Aerospace Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Tokai University"},{"subitem_text_language":"en","subitem_text_value":"Tokai University"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"稲富, 裕光"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wang, Yue"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"菊池, 正則"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"中村, 龍太"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"内田, 祐樹"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"神保, 至"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Inatomi, Yuko","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wang, Yue","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kikuchi, Masanori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakamura, Ryuta","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Uchida, Yuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jinbo, Itaru","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-15"}],"displaytype":"detail","filename":"48516000.pdf","filesize":[{"value":"5.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"48516000.pdf","url":"https://jaxa.repo.nii.ac.jp/record/2306/files/48516000.pdf"},"version_id":"6a3e7253-6952-4982-bbe3-b48efb034d80"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"形態安定性","subitem_subject_scheme":"Other"},{"subitem_subject":"界面安定性","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"ステップカイネティック係数","subitem_subject_scheme":"Other"},{"subitem_subject":"CdZnTe結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"液相エピタキシー","subitem_subject_scheme":"Other"},{"subitem_subject":"導電性流体","subitem_subject_scheme":"Other"},{"subitem_subject":"morphological stability","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"interface stability","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"step kinetic coefficient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"CdZnTe crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"liquid phase epitaxy","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"conducting fluid","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"半導体結晶の溶液成長における固液界面形態安定性に関する研究成果報告","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"半導体結晶の溶液成長における固液界面形態安定性に関する研究成果報告"}]},"item_type_id":"3","owner":"1","path":["311","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"2306","relation_version_is_last":true,"title":["半導体結晶の溶液成長における固液界面形態安定性に関する研究成果報告"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T09:24:55.713954+00:00"}