{"created":"2023-06-20T14:55:05.596359+00:00","id":23475,"links":{},"metadata":{"_buckets":{"deposit":"03afd5ab-daca-4e23-b226-bc2835f1f1ea"},"_deposit":{"created_by":1,"id":"23475","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"23475"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00023475","sets":["1887:1888"]},"author_link":["223632","223635","223624","223631","223629","223625","223627","223628","223634","223630","223633","223626"],"item_7_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"1301","bibliographicPageStart":"1295","bibliographicVolumeNumber":"13","bibliographic_titles":[{},{"bibliographic_title":"IEEE Journal of Selected Topics in Quantum Electronics","bibliographic_titleLang":"en"}]}]},"item_7_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: SA1000133000","subitem_description_type":"Other"}]},"item_7_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"IEEE Lasers and Electro-Optics Society"}]},"item_7_relation_25":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"info:doi/10.1109/JSTQE.2007.903850"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1109/JSTQE.2007.903850","subitem_relation_type_select":"DOI"}}]},"item_7_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1077-260X","subitem_source_identifier_type":"ISSN"}]},"item_7_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11036333","subitem_source_identifier_type":"NCID"}]},"item_7_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"NTT Corp"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"荒井, 昌和"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"渡辺, 孝夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"湯田, 正宏"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 眞一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"近藤, 康洋"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Arai, Masakazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Watanabe, Takao","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yuda, Masahiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kondo, Yasuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"High-Characteristic-Temperature 1.3-μm-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High-Characteristic-Temperature 1.3-μm-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method","subitem_title_language":"en"}]},"item_type_id":"7","owner":"1","path":["1888"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"23475","relation_version_is_last":true,"title":["High-Characteristic-Temperature 1.3-μm-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T03:05:34.249150+00:00"}