{"created":"2023-06-20T14:36:03.684279+00:00","id":2362,"links":{},"metadata":{"_buckets":{"deposit":"8039ea45-deb0-4b4b-af71-89ca9d8f45f3"},"_deposit":{"created_by":1,"id":"2362","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2362"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00002362","sets":["1887:1893","9:10:309:345"]},"author_link":["5639","5638"],"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-03-31","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"JAXA-RR-04-022E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構研究開発報告"},{"bibliographic_title":"JAXA Research and Development Report","bibliographic_titleLang":"en"}]}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0048451000","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-RR-04-022E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-1113","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA1192675X","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部　ISS科学プロジェクト室"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency ISS Science Project Office, Institute of Space and Astronautical Science"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"宇宙航空研究開発機構"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Japan Aerospace Exploration Agency","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-15"}],"displaytype":"detail","filename":"48451000.pdf","filesize":[{"value":"7.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"48451000.pdf","url":"https://jaxa.repo.nii.ac.jp/record/2362/files/48451000.pdf"},"version_id":"b14d1be7-537f-4fc5-8ce2-f684cc2f97d0"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"飽和溶融帯移動法","subitem_subject_scheme":"Other"},{"subitem_subject":"シリコン化合物","subitem_subject_scheme":"Other"},{"subitem_subject":"砒素化合物","subitem_subject_scheme":"Other"},{"subitem_subject":"液相線","subitem_subject_scheme":"Other"},{"subitem_subject":"数値解析","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体デバイス","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"Si-Ge結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"インジウムガリウム砒素","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長モデル","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"材料バランス","subitem_subject_scheme":"Other"},{"subitem_subject":"流体力学","subitem_subject_scheme":"Other"},{"subitem_subject":"拡散係数","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus-zone method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon compound","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"arsenic compound","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"liquidus","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"numerical analysis","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor device","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Si-Ge crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"indium gallium arsenide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth model","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"material balance","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"fluid dynamics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"diffusion coefficient","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["345","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"2362","relation_version_is_last":true,"title":["Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals"],"weko_creator_id":"1","weko_shared_id":1},"updated":"2023-06-20T19:52:13.937871+00:00"}