@techreport{oai:jaxa.repo.nii.ac.jp:00002363,
 author = {宮田, 浩旭 and 緒方, 康行 and 木下, 恭一 and 足立, 聡 and 依田, 真一 and 鶴, 哲也 and 村松, 祐治 and Miyata, Hiroaki and Ogata, Yasuyuki and Kinoshita, Kyoichi and Adachi, Satoshi and Yoda, Shinichi and Tsuru, Tetsuya and Muramatsu, Yuji},
 month = {Mar},
 note = {The Si(0.5)Ge(0.5) bulk crystals growth has been challenged. Si-Ge homogeneous single crystals are difficult to grow so far. In the present research, the Traveling Liquidus-Zone method (TLZ method) which was invented in the group as a new crystal growth method to the growth of Si-Ge has been applied. The diameter of grown crystal was 2 mm and the length was 15 mm. Crystals were well seeded and had the orientation of silicon seeds in spite of the large lattice mismatch. The compositional variation of the crystals was very small and the composition was in the mole fraction range of 0.5 +/- 0.016 in germanium. The lattice constant determined by the X-ray powder diffraction was 55.38 nm., 資料番号: AA0048451001, レポート番号: JAXA-RR-04-022E},
 title = {Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method},
 year = {2005}
}