{"created":"2023-06-20T14:36:03.727840+00:00","id":2363,"links":{},"metadata":{"_buckets":{"deposit":"932b7592-c180-4697-8bf0-a78e650912c1"},"_deposit":{"created_by":1,"id":"2363","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2363"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00002363","sets":["1887:1893","9:10:309:345"]},"author_link":["5651","5644","5646","5647","5649","5643","5642","5641","5645","5640","5648","5650","5652","5653"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"今期の詳細な結果:Traveling Liquidus-Zone法による均一なSi(0.5)Ge(0.5)単結晶の成長"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"13","bibliographicPageStart":"7","bibliographicVolumeNumber":"JAXA-RR-04-022E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構研究開発報告"},{"bibliographic_title":"JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The Si(0.5)Ge(0.5) bulk crystals growth has been challenged. Si-Ge homogeneous single crystals are difficult to grow so far. In the present research, the Traveling Liquidus-Zone method (TLZ method) which was invented in the group as a new crystal growth method to the growth of Si-Ge has been applied. The diameter of grown crystal was 2 mm and the length was 15 mm. Crystals were well seeded and had the orientation of silicon seeds in spite of the large lattice mismatch. The compositional variation of the crystals was very small and the composition was in the mole fraction range of 0.5 +/- 0.016 in germanium. The lattice constant determined by the X-ray powder diffraction was 55.38 nm.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0048451001","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-RR-04-022E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-1113","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA1192675X","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"宮田, 浩旭"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"緒方, 康行"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"足立, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 真一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鶴, 哲也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"村松, 祐治"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Miyata, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogata, Yasuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Adachi, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuru, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Muramatsu, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-15"}],"displaytype":"detail","filename":"48451001.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"48451001.pdf","url":"https://jaxa.repo.nii.ac.jp/record/2363/files/48451001.pdf"},"version_id":"390b1884-92d4-4c63-b115-68bba3fa3278"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"飽和溶融帯移動法","subitem_subject_scheme":"Other"},{"subitem_subject":"シリコン化合物","subitem_subject_scheme":"Other"},{"subitem_subject":"液相線","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶性","subitem_subject_scheme":"Other"},{"subitem_subject":"薄膜","subitem_subject_scheme":"Other"},{"subitem_subject":"Si-Ge結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"物質拡散","subitem_subject_scheme":"Other"},{"subitem_subject":"拡散係数","subitem_subject_scheme":"Other"},{"subitem_subject":"X線回折","subitem_subject_scheme":"Other"},{"subitem_subject":"ラウエ法","subitem_subject_scheme":"Other"},{"subitem_subject":"成長速度","subitem_subject_scheme":"Other"},{"subitem_subject":"状態図","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus-zone method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon compound","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"liquidus","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystallinity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"thin film","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Si-Ge crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"mass transfer","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"diffusion coefficient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"X-ray diffraction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Laue method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth rate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"phase diagram","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["345","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"2363","relation_version_is_last":true,"title":["Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T09:23:55.787985+00:00"}