@techreport{oai:jaxa.repo.nii.ac.jp:00002364,
 author = {木下, 恭一 and 緒方, 康行 and 足立, 聡 and 越川, 尚清 and 鶴, 哲也 and 宮田, 浩旭 and 村松, 祐治 and 依田, 真一 and Kinoshita, Kyoichi and Ogata, Yasuyuki and Adachi, Satoshi and Koshikawa, Naokiyo and Tsuru, Tetsuya and Miyata, Hiroaki and Muramatsu, Yuji and Yoda, Shinichi},
 month = {Mar},
 note = {The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the growth of various diameter crystals on the ground. The results have shown that excellent compositional homogeneity is realized even on the ground if the crystal diameter is less than 2 mm and convection in a melt is suppressed. However, such small diameter crystals cannot be used for device application. Then, the plate crystal growth for obtaining large surface area was tried since the limitation of the thickness of plate crystal was useful for suppressing convection in a melt. In(0.3)Ga(0.7)As plate crystals with 10 mm width and 2 mm thickness showed good compositional homogeneity as expected but the grown crystals were poly crystals. Single crystallization of plate crystals is required for device fabrication and the effort was made to grow plate-like In(0.3)Ga(0.7)As single crystals. Those results obtained in this study in the fiscal year of 2003 is reported here., 資料番号: AA0048451002, レポート番号: JAXA-RR-04-022E},
 title = {In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method},
 year = {2005}
}