{"created":"2023-06-20T14:36:03.774901+00:00","id":2364,"links":{},"metadata":{"_buckets":{"deposit":"091d9211-7528-424a-994f-02028cdc76a7"},"_deposit":{"created_by":1,"id":"2364","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2364"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00002364","sets":["1887:1893","9:10:309:345"]},"author_link":["5665","5669","5661","5662","5664","5654","5666","5668","5657","5658","5656","5659","5667","5655","5660","5663"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Traveling Liquidus-Zone法による板状のIn(0.3)Ga(0.7)As結晶成長"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"20","bibliographicPageStart":"14","bibliographicVolumeNumber":"JAXA-RR-04-022E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構研究開発報告"},{"bibliographic_title":"JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the growth of various diameter crystals on the ground. The results have shown that excellent compositional homogeneity is realized even on the ground if the crystal diameter is less than 2 mm and convection in a melt is suppressed. However, such small diameter crystals cannot be used for device application. Then, the plate crystal growth for obtaining large surface area was tried since the limitation of the thickness of plate crystal was useful for suppressing convection in a melt. In(0.3)Ga(0.7)As plate crystals with 10 mm width and 2 mm thickness showed good compositional homogeneity as expected but the grown crystals were poly crystals. Single crystallization of plate crystals is required for device fabrication and the effort was made to grow plate-like In(0.3)Ga(0.7)As single crystals. Those results obtained in this study in the fiscal year of 2003 is reported here.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0048451002","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-RR-04-022E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-1113","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA1192675X","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙基幹システム本部"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Office of Space Flight and Operations"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"緒方, 康行"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"足立, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"越川, 尚清"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鶴, 哲也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宮田, 浩旭"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"村松, 祐治"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 真一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogata, Yasuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Adachi, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Koshikawa, Naokiyo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuru, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Miyata, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Muramatsu, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-15"}],"displaytype":"detail","filename":"48451002.pdf","filesize":[{"value":"1.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"48451002.pdf","url":"https://jaxa.repo.nii.ac.jp/record/2364/files/48451002.pdf"},"version_id":"f899d285-5b10-4133-92fc-9fdd7ddae241"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"飽和溶融帯移動法","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶化","subitem_subject_scheme":"Other"},{"subitem_subject":"砒素化合物","subitem_subject_scheme":"Other"},{"subitem_subject":"液相線","subitem_subject_scheme":"Other"},{"subitem_subject":"1方向凝固","subitem_subject_scheme":"Other"},{"subitem_subject":"重力条件","subitem_subject_scheme":"Other"},{"subitem_subject":"レーザダイオード","subitem_subject_scheme":"Other"},{"subitem_subject":"インジウムガリウム砒素","subitem_subject_scheme":"Other"},{"subitem_subject":"対流","subitem_subject_scheme":"Other"},{"subitem_subject":"成長モデル","subitem_subject_scheme":"Other"},{"subitem_subject":"板状結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"溶液ゾーン","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus-zone method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystallization","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"arsenic compound","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"liquidus","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"directional solidification","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gravity condition","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"laser diode","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"indium gallium arsenide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"convection","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth model","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"plate crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"solution zone","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["345","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"2364","relation_version_is_last":true,"title":["In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T09:23:54.729892+00:00"}