@article{oai:jaxa.repo.nii.ac.jp:00024122,
 author = {原, 和彦 and 河内山, 真美 and 望月, 亜衣 and 瀬賀, 智子 and 新井, 康夫 and 福田, 浩一 and 林, 洋一 and 廣瀬, 穣 and 井田, 次郎 and 池田, 博一 and 池上, 陽一 and 池本, 由希子 and 河合, 泰明 and 高力, 孝 and 小松原, 弘毅 and 三宅, 秀樹 and 三好, 敏喜 and 大野, 守史 and 沖原, 将生 and 寺田, 進 and 坪山, 透 and 海野, 義信 and Hara, Kazuhiko and Kochiyama, M. and Mochizuki, Ai and Sega, Tomoko and Arai, Yasuo and Fukuda, Koichi and Hayashi, H. and Hirose, M. and Ida, J. and Ikeda, Hirokazu and Ikegami, Y. and Ikemoto, Y. and Kawai, Y. and Kohriki, T. and Komatsubara, H. and Miyake, H. and Miyoshi, T. and Ohno, M. and Okihara, M. and Terada, S. and Tsuboyama, T. and Unno, Y.},
 issue = {5},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Oct},
 note = {著者人数：22名, 資料番号: SA1000806000},
 pages = {2896--2904},
 title = {Radiation Resistance of SOI Pixel Devices Fabricated With OKI 0.15 μm  FD-SOI Technology},
 volume = {56},
 year = {2009}
}