@article{oai:jaxa.repo.nii.ac.jp:00025292,
 author = {五十嵐, 信行 and 廣瀬, 和之 and Foxman, E. B. and Ikarashi, N. and Hirose, Kazuyuki},
 issue = {19},
 journal = {Applied Physics Letters},
 month = {Nov},
 note = {Accepted: 1991-08-13, 資料番号: SA1001994000},
 pages = {2403--2405},
 title = {High-concentration Ce doping at n-and p-type Al/GaAs Schottky barrier interfaces},
 volume = {59},
 year = {1991}
}