@article{oai:jaxa.repo.nii.ac.jp:00025306,
 author = {服部, 健雄 and 高橋, 健介 and 野平, 博司 and 廣瀬, 和之 and 鎌倉, 望 and 高田, 恭孝 and 辛, 埴 and 小林, 啓介 and Hattori, T. and Takahashi, K. and Seman, M. B. and Nohira, H. and Hirose, Kazuyuki and Kamakura, N. and Takata, T. and Shin, S. and Kobayashi, K.},
 journal = {Applied Surface Science},
 month = {May},
 note = {資料番号: SA1002008000},
 pages = {547--555},
 title = {Chemical and electronic structure of SiO2/Si interfacial transition layer},
 volume = {212-213},
 year = {2003}
}