@article{oai:jaxa.repo.nii.ac.jp:00025313,
 author = {廣瀬, 和之 and 齋藤, 宏文 and 黒田, 能克 and 石井, 茂 and 福岡, 佳宏 and 高橋, 大輔 and Hirose, Kazuyuki and Saito, Hirobumi and Kuroda, Y. and Ishii, S. and Fukuoka, Y. and Takahashi, D.},
 issue = {6},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Dec},
 note = {資料番号: SA1002015000},
 pages = {2965--2968},
 title = {SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design},
 volume = {49},
 year = {2002}
}