{"created":"2023-06-20T14:56:44.881291+00:00","id":25320,"links":{},"metadata":{"_buckets":{"deposit":"fc147361-6620-4963-953b-9749c463b5a4"},"_deposit":{"created_by":1,"id":"25320","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"25320"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00025320","sets":["1887:1888"]},"author_link":["254359","254357","254356","254358"],"item_7_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1985","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"L121","bibliographicPageStart":"L119","bibliographicVolumeNumber":"24","bibliographic_titles":[{},{"bibliographic_title":"Japanese Journal of Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_7_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Accepted: 1985-01-26","subitem_description_type":"Other"}]},"item_7_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: SA1002022000","subitem_description_type":"Other"}]},"item_7_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"The Japan Society of Applied Physics"}]},"item_7_relation_25":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"info:doi/10.1143/JJAP.24.L119"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1143/JJAP.24.L119","subitem_relation_type_select":"DOI"}}]},"item_7_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10650595","subitem_source_identifier_type":"NCID"}]},"item_7_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"日本電気（株）基礎研究所"},{"subitem_text_value":"日本電気（株）基礎研究所"}]},"item_7_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Fundamental Research Laboratories, NEC Corporation"},{"subitem_text_language":"en","subitem_text_value":"Fundamental Research Laboratories, NEC Corporation"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"水谷, 隆"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"廣瀬, 和之"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mizutani, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirose, Kazuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"High mobility GaInAs thin layers grown by molecular beam epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High mobility GaInAs thin layers grown by molecular beam epitaxy","subitem_title_language":"en"}]},"item_type_id":"7","owner":"1","path":["1888"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"25320","relation_version_is_last":true,"title":["High mobility GaInAs thin layers grown by molecular beam epitaxy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T02:38:12.979133+00:00"}