@article{oai:jaxa.repo.nii.ac.jp:00025328,
 author = {乃万, 裕一 and 高橋, 宏行 and 藤岡, 洋 and 尾嶋, 正治 and 馬場, 祐治 and 廣瀬, 和之 and 丹羽, 正昭 and 臼田, 宏治 and 平下, 紀夫 and Noma, Hirokazu and Takahashi, Hiroyuki and Fujioka, Hiroshi and Oshima, Masahara and Baba, Yuji and Hirose, Kazuyuki and Niwa, Masaaki and Usuda, Koji and Hirashita, Norio},
 issue = {10},
 journal = {Journal of Applied Physics},
 month = {Nov},
 note = {Accepted: 2001-08-30, 資料番号: SA1002030000},
 pages = {5434--5437},
 title = {Uniaxial and biaxial strain field dependence of the thermal oxidation rate of silicon},
 volume = {90},
 year = {2001}
}