{"created":"2023-06-20T14:56:45.570833+00:00","id":25335,"links":{},"metadata":{"_buckets":{"deposit":"0ef4f95f-d7a8-48ae-836c-a34397557539"},"_deposit":{"created_by":1,"id":"25335","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"25335"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00025335","sets":["1887:1888"]},"author_link":["254477","254474","254473","254478","254476","254475"],"item_7_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1995-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"19","bibliographicPageEnd":"13191","bibliographicPageStart":"13187","bibliographicVolumeNumber":"51","bibliographic_titles":[{},{"bibliographic_title":"Physical Review B","bibliographic_titleLang":"en"}]}]},"item_7_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: SA1002037000","subitem_description_type":"Other"}]},"item_7_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_7_relation_25":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"info:doi/10.1103/PhysRevB.51.13187"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1103/PhysRevB.51.13187","subitem_relation_type_select":"DOI"}}]},"item_7_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"ISSN"}]},"item_7_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11187113","subitem_source_identifier_type":"NCID"}]},"item_7_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"日本電気（株）マイクロエレクトロニクス研究所"},{"subitem_text_value":"日本電気（株）マイクロエレクトロニクス研究所"},{"subitem_text_value":"日本電気（株）ULSIデバイス開発研究所"}]},"item_7_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Microelectronics Research Laboratories, NEC Corporation"},{"subitem_text_language":"en","subitem_text_value":"Microelectronics Research Laboratories, NEC Corporation"},{"subitem_text_language":"en","subitem_text_value":"ULSI Device Development Laboratories, NEC Corporation"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小沼, 和夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"浅野, 義堂"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"廣瀬, 和之"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Konuma, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Asano, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirose, Kazuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Internal photoemission spectroscopy for a PtSi/p-type Si Schottky-barrier diode","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Internal photoemission spectroscopy for a PtSi/p-type Si Schottky-barrier diode","subitem_title_language":"en"}]},"item_type_id":"7","owner":"1","path":["1888"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"25335","relation_version_is_last":true,"title":["Internal photoemission spectroscopy for a PtSi/p-type Si Schottky-barrier diode"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T02:38:00.143860+00:00"}