@article{oai:jaxa.repo.nii.ac.jp:00025532,
 author = {村上, 未生 and 小林, 謙仁 and 国分, 紀秀 and 高橋, 勲 and 岡田, 祐 and 川原田, 円 and 中澤, 知洋 and 渡辺, 伸 and 佐藤, 悟朗 and 古宇多, 学 and 三谷, 烈史 and 高橋, 忠幸 and 鈴木, 雅也 and 田代, 信 and 川添, 哲志 and 能町, 正治 and 牧島, 一夫 and Murakami, Mio M. and Kobayashi, Yoshihito and Kokubun, Motohide and Takahashi, Isao and Okada, Yuu and Kawaharada, Madoka and Nakazawa, Kazuhiro and Watanabe, Shin and Sato, Goro and Kouda, Manabu and Mitani, Takefumi and Takahashi, Tadayuki and Suzuki, Masaya and Tashiro, Makoto and Kawasoe, Satoshi and Nomachi, Masaharu and Makishima, Kazuo},
 issue = {4},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Aug},
 note = {著者人数：17名, 資料番号: SA1002234000},
 pages = {1013--1019},
 title = {Activation Properties of Schottky CdTe Diodes Irradiated by 150 MeV Protons},
 volume = {50},
 year = {2003}
}