@article{oai:jaxa.repo.nii.ac.jp:00026375,
 author = {金田, 英宏 and 和田, 武彦 and 大藪, 進喜 and 狩野, 良子 and 桐山, 雄一 and 服部, 和生 and 鈴木, 仁研 and Ide, Kensuke and Kato, Masahiro and 渡辺, 健太郎 and Kaneda, Hidehiro and Wada, Takehiko and Oyabu, Shinki and Kano, Ryoko and Kiriyama, Yuichi and Hattori, Yasuki and Suzuki, Toyoaki and Ide, Kensuke and Kato, Masahiro and Watanabe, Kentaroh},
 issue = {6-1},
 journal = {Japanese Journal of Applied Physics},
 month = {Jun},
 note = {Accepted: 2011-03-12, 資料番号: SA1003077000},
 title = {Electrical and Photoconductive Properties at 1.8 K of Germanium p+-i Junction Device Fabricated by Surface-Activated Wafer Bonding},
 volume = {50},
 year = {2011}
}