@article{oai:jaxa.repo.nii.ac.jp:00026542,
 author = {Rodriguez, Abraham Luque and Gonzalez, Mireia Bargallo and Eneman, Geert and Claeys, Cor and 小林, 大輔 and Simoen, Eddy and Tejada, Juan A. Jimenez and Rodriguez, Abraham Luque and Gonzalez, Mireia Bargallo and Eneman, Geert and Claeys, Cor and Kobayashi, Daisuke and Simoen, Eddy and Tejada, Juan A. Jimenez},
 issue = {8},
 journal = {IEEE Transactions on Electron Devices},
 month = {Aug},
 note = {Accepted: 2011-04-19, 資料番号: SA1003244000},
 pages = {2362--2370},
 title = {Impact of the Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions},
 volume = {58},
 year = {2011}
}