{"created":"2023-06-20T14:57:46.767582+00:00","id":26542,"links":{},"metadata":{"_buckets":{"deposit":"7d6d36af-8674-41a5-9cb7-5343f92fd447"},"_deposit":{"created_by":1,"id":"26542","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"26542"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00026542","sets":["1887:1888"]},"author_link":["295434","295425","295421","295429","295432","295427","295433","295431","295423","295424","295426","295422","295430","295428"],"item_7_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"2370","bibliographicPageStart":"2362","bibliographicVolumeNumber":"58","bibliographic_titles":[{},{"bibliographic_title":"IEEE Transactions on Electron Devices","bibliographic_titleLang":"en"}]}]},"item_7_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Accepted: 2011-04-19","subitem_description_type":"Other"}]},"item_7_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: SA1003244000","subitem_description_type":"Other"}]},"item_7_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Institute of Electrical and Electronics Engineers"}]},"item_7_relation_25":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"info:doi/10.1109/TED.2011.2148723"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1109/TED.2011.2148723","subitem_relation_type_select":"DOI"}}]},"item_7_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0018-9383","subitem_source_identifier_type":"ISSN"}]},"item_7_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00667820","subitem_source_identifier_type":"NCID"}]},"item_7_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Interuniversity Microelectronics Center"},{"subitem_text_value":"Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven"},{"subitem_text_value":"Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven : Fonds Wetenschappelijk Onderzoek-Vlaanderen"},{"subitem_text_value":"Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven"},{"subitem_text_value":"Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven"},{"subitem_text_value":"Interuniversity Microelectronics Center"},{"subitem_text_value":"Departamento de Electronica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada"}]},"item_7_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Interuniversity Microelectronics Center"},{"subitem_text_language":"en","subitem_text_value":"Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven"},{"subitem_text_language":"en","subitem_text_value":"Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven : Fonds Wetenschappelijk Onderzoek-Vlaanderen"},{"subitem_text_language":"en","subitem_text_value":"Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven"},{"subitem_text_language":"en","subitem_text_value":"Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven"},{"subitem_text_language":"en","subitem_text_value":"Interuniversity Microelectronics Center"},{"subitem_text_language":"en","subitem_text_value":"Departamento de Electronica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Rodriguez, Abraham Luque"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Gonzalez, Mireia Bargallo"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Eneman, Geert"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Claeys, Cor"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小林, 大輔"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Simoen, Eddy"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tejada, Juan A. Jimenez"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Rodriguez, Abraham Luque","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Gonzalez, Mireia Bargallo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Eneman, Geert","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Claeys, Cor","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kobayashi, Daisuke","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Simoen, Eddy","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tejada, Juan A. Jimenez","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Impact of the Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Impact of the Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions","subitem_title_language":"en"}]},"item_type_id":"7","owner":"1","path":["1888"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"26542","relation_version_is_last":true,"title":["Impact of the Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T02:18:52.206900+00:00"}