@techreport{oai:jaxa.repo.nii.ac.jp:00002704,
 author = {今泉, 充 and 住田, 泰史 and 桑島, 三郎 and Imaizumi, Mitsuru and Sumita, Taishi and Kuwajima, Saburo},
 month = {Oct},
 note = {The radiation responses of InGaP, (In)GaAs and Ge single-junction sub-cells in a triple-junction space solar cell are studied in order to develop a device simulator which predicts the EOL performance of space solar cells. InGaP top-cells exhibit no significant difference in radiation degradation trends between AM0 light and dark conditions during irradiation. The radiation tolerance of (In)GaAs middle-cells degrades with increasing indium content. However, the absolute value of Isc for a higher In content cell still exceeds that of a GaAs (In = 0 percent) cell after irradiation. Ge bottom-cells exhibit good radiation tolerance as expected. This study is the first to reveal precise radiation response of the sub-cells., 資料番号: AA0048057013, レポート番号: JAXA-RM-04-010},
 title = {高効率3接合太陽電池に関する研究},
 year = {2004}
}