@techreport{oai:jaxa.repo.nii.ac.jp:00002705,
 author = {川北, 史朗 and 島崎, 一紀 and 今泉, 充 and 桑島, 三郎 and Kawakita, Shiro and Shimazaki, Kazunori and Imaizumi, Mitsuru and Kuwajima, Saburo},
 month = {Oct},
 note = {To analyze spectral response of solar cells before and after radiation test, the information of defects in the solar cells can be introduced. Radiation effect of Cu(In, Ga)Se2 thin-film solar cells has been studied using by spectral response measurement. Damage constant of minority carrier diffusion length (K(sub L)) of the solar cells irradiated with 1 MeV protons was 4.7 x 10(exp -5). The defect introduction rate of proton irradiated CIGS solar cells using the same method was obtained., 資料番号: AA0048057014, レポート番号: JAXA-RM-04-010},
 title = {薄膜太陽電池の宇宙応用に関する研究},
 year = {2004}
}