{"created":"2023-06-20T14:36:27.228986+00:00","id":2765,"links":{},"metadata":{"_buckets":{"deposit":"db0fbeb4-8286-4a47-af4d-56803be94154"},"_deposit":{"created_by":1,"id":"2765","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2765"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00002765","sets":["1887:1893","9:1090:1333:1343"]},"author_link":["8880","8876","8883","8878","8879","8884","8875","8882","8877","8886","8885","8881"],"item_3_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Analysis results of single event effects on COTS memories by MDS-1"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-02-04","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"521","bibliographicPageStart":"518","bibliographicVolumeNumber":"JAXA-RM-03-022","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構研究開発資料: 民生部品・コンポーネント実証衛星つばさ:MDS-1軌道上実証成果報告書"},{"bibliographic_title":"JAXA Research and Development Memorandum: Report of Flight Demonstration Results of the Mission Demonstration Test Satellite-1 (MDS-1; TSUBASA)","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Seven kinds of COTS memories were installed in Commercial Semiconductor Devices (CSD) and their single event effects were observed. Single Event Upset (SEU) and Multi-Bit Upset (MBU) were observed in DRAMs and SRAMs, and no Single Event Latchup (SEL) was observed in all memories. The results showed that most of SEU and MBU was caused by protons in Van Allen belt, and that the number of MBU was considerably large to neglect. They also showed that some of the on-orbit data were not consistent with the results obtained from the ground test. This implies that the structure of recent memories have become too small to predict accurate SEU rate by present model.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0046975005","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-RM-03-022","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency 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design","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Tsubasa","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single event upset","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"cosmic ray","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"multi-bit upset","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"commercial semiconductor device","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"radiation damage","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical 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