@article{oai:jaxa.repo.nii.ac.jp:00027902,
 author = {Omprakash, M. and Arivanandhan, M. and Kumar, R. Arun and 森井, 久史 and 青木, 徹 and 小山, 忠信 and 百瀬, 与志美 and 池田, 浩也 and 立岡, 浩一 and 岡野, 泰則 and 小澤, 哲夫 and Babu, S. Moorthy and 稲富, 裕光 and 早川, 泰弘 and Omprakash, M. and Arivanandhan, M. and Kumar, R. Arun and Morii, H. and Aoki, T. and Koyama, T. and Momose, Y. and Ikeda, H. and Tatsuoka, H. and Okano, Y. and Ozawa, T. and Babu, S. Moorthy and Inatomi, Yuko and Hayakawa, Y.},
 journal = {Journal of Alloys and Compounds},
 month = {Mar},
 note = {著者人数: 14名, Accepted: 2013-12-10, 資料番号: SA1004610000},
 pages = {96--101},
 title = {Analysis of Dissolution and Growth Process of SiGe Alloy Semiconductor based on Penetrated X-ray Intensities},
 volume = {590},
 year = {2014}
}