@article{oai:jaxa.repo.nii.ac.jp:00028702,
 author = {Omprakash, Muthusamy and Arivanandhan, Mukannan and 小山, 忠信 and 百瀬, 与志美 and 池田, 浩也 and 立岡, 浩一 and Aswal, Dinesh K. and Bhattacharya, Shovit and 岡野, 泰則 and 小澤, 哲夫 and 稲富, 裕光 and Babu, Sridharan Moorthy and 早川, 泰弘 and Omprakash, Muthusamy and Arivanandhan, Mukannan and Koyama, Tadanobu and Momose, Yoshimi and Ikeda, Hiroya and Tatsuoka, Hirokazu and Aswal, Dinesh K. and Bhattacharya, Shovit and Okano, Yasunori and Ozawa, Tetsuo and Inatomi, Yuko and Babu, Sridharan Moorthy and Hayakawa, Yasuhiro},
 issue = {3},
 journal = {Crystal Growth & Design},
 month = {},
 note = {著者人数: 13名, 資料番号: SA1150023000},
 pages = {1380--1388},
 title = {High Power Factor of Ga-Doped Compositionally Homogeneous Si0.68Ge0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method},
 volume = {15},
 year = {2015}
}