@article{oai:jaxa.repo.nii.ac.jp:00028970,
 author = {Omprakash, M. and Arivanandhan, M. and Sabarinathan, M. and 小山, 忠信 and 百瀬, 与志美 and 池田, 浩也 and 立岡, 浩一 and Aswal, D. K. and Bhattacharya, S. and 稲富, 裕光 and 早川, 泰弘 and Omprakash, M. and Arivanandhan, M. and Sabarinathan, M. and Koyama, Tadanobu and Momose, Yoshimi and Ikeda, Hiroya and Tatsuoka, Hirokazu and Aswal, D. K. and Bhattacharya, S. and Inatomi, Yuko and Hayakawa, Yasuhiro},
 journal = {Journal of Crystal Growth},
 month = {May},
 note = {著者人数: 11名, Accepted: 2016-02-18, 資料番号: SA1150292000},
 pages = {102--109},
 title = {Vertical Gradient Solution Growth of N-type Si0.73Ge0.27 Bulk Crystals with Homogeneous Composition and its Thermoelectric Properties},
 volume = {442},
 year = {2015}
}