@article{oai:jaxa.repo.nii.ac.jp:00029004,
 author = {花岡, 美咲 and 金田, 英宏 and 大薮, 進喜 and 山岸, 光義 and 服部, 和生 and 鵜飼, 壮太 and 志知, 和幸 and 和田, 武彦 and 鈴木, 仁研 and 渡辺, 健太郎 and 長勢, 晃一 and 馬場, 俊介 and 公地, 千尋 and Hanaoka, Misaki and Kaneda, Hidehiro and Oyabu, Shinki and Yamagishi, Mitsuyoshi and Hattori, Yasuki and Ukai, Sota and Shichi, Kazuyuki and Wada, Takehiko and Suzuki, Toyoaki and Watanabe, Kentaroh and Nagase, Koichi and Baba, Shunsuke and Kochi, Chihiro},
 issue = {1},
 journal = {Journal of Low Temperature Physics},
 month = {Jul},
 note = {著者人数: 13名, Accepted: 2016-01-04, 資料番号: SA1150326000},
 pages = {225--230},
 title = {Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy},
 volume = {184},
 year = {2016}
}