@article{oai:jaxa.repo.nii.ac.jp:00029343,
 author = {Lourenco, Nelson E. and Fleetwood, Zachary E. and Ildefonso, Adrian and Wachter, Mason T. and Roche, Nicolas J.-H. and Khachatrian, Ani and McMorrow, Dale and Buchner, Stephen P. and Warner, Jeffrey H. and 井辻, 宏章 and 小林, 大輔 and 廣瀬, 和之 and Paki, Pauline and Raman, Ashok and Cressler, John D. and Lourenco, Nelson E. and Fleetwood, Zachary E. and Ildefonso, Adrian and Wachter, Mason T. and Roche, Nicolas J.-H. and Khachatrian, Ani and McMorrow, Dale and Buchner, Stephen P. and Warner, Jeffrey H. and Itsuji, Hiroaki and Kobayashi, Daisuke and Hirose, Kazuyuki and Paki, Pauline and Raman, Ashok and Cressler, John D.},
 issue = {1},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Jan},
 note = {著者人数: 15名, Accepted: 2016-11-08, 資料番号: SA1160320000},
 pages = {406--414},
 title = {The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs},
 volume = {64},
 year = {2017}
}