@article{oai:jaxa.repo.nii.ac.jp:00029593,
 author = {小林, 大輔 and 廣瀬, 和之 and 伊藤, 大智 and 梯, 友哉 and 川崎, 治 and 牧野, 高紘 and 大島, 武 and 松浦, 大介 and 成田, 貴則 and 加藤, 昌浩 and 石井, 茂 and 益川, 一範 and Kobayashi, Daisuke and Hirose, Kazuyuki and Ito, Taichi and Kakehashi, Yuya and Kawasaki, Osamu and Makino, Takahiro and Ohshima, Takeshi and Matsuura, Daisuke and Narita, Takanori and Kato, Masahiro and Ishii, Shigeru and Masukawa, Kazunori},
 issue = {1},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Jan},
 note = {著者人数: 12名, Accepted: 2017-11-14, 資料番号: SA1170193000},
 pages = {523--532},
 title = {Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets},
 volume = {65},
 year = {2018}
}