@article{oai:jaxa.repo.nii.ac.jp:00030047,
 author = {荒井, 康智 and 木下, 恭一 and 塚田, 隆夫 and 久保, 正樹 and 阿部, 敬太 and 住岡, 沙羅 and 馬場, 嵯登史 and 稲富, 裕光 and Arai, Yasutomo and Kinoshita, Kyoichi and Tsukada, Takao and Kubo, Masaki and Abe, Keita and Sumioka, Sara and Baba, Satoshi and Inatomi, Yuko},
 issue = {6},
 journal = {Crystal Growth & Design},
 month = {},
 note = {資料番号: SA1180270000},
 pages = {3697--3703},
 title = {Study of SiGe Crystal Growth Interface Processed in Microgravity},
 volume = {18},
 year = {2018}
}