@article{oai:jaxa.repo.nii.ac.jp:00030114,
 author = {小林, 大輔 and Hayashi, Naoki and 廣瀬, 和之 and 梯, 友哉 and 川崎, 治 and 牧野, 高紘 and 大島, 武 and 松浦, 大介 and Mori, Yoshiharu and Kusano, Masaki and 成田, 貴則 and 石井, 茂 and 益川, 一範 and Kobayashi, Daisuke and Hayashi, Naoki and Hirose, Kazuyuki and Kakehashi, Yuya and Kawasaki, Osamu and Makino, Takahiro and Ohshima, Takeshi and Matsuura, Daisuke and Mori, Yoshiharu and Kusano, Masaki and Narita, Takanori and Ishii, Shigeru and Masukawa, Kazunori},
 issue = {1},
 journal = {IEEE Transactions on Nuclear Science},
 month = {Jan},
 note = {著者人数: 13名, Accepted: 2018-11-13, 資料番号: SA1180337000},
 pages = {155--162},
 title = {Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage},
 volume = {66},
 year = {2019}
}