@inproceedings{oai:jaxa.repo.nii.ac.jp:00003067,
 author = {服部, 和生 and 金田, 英宏 and 大薮, 進喜 and 木幡, 洸大 and 田中, 琴未 and 和田, 武彦 and 鈴木, 仁研 and 渡辺, 健太郎 and Hattori, Yasuki and Kaneda, Hidehiro and Oyabu, Shinki and Kobata, Kodai and Tanaka, Kotomi and Wada, Takehiko and Suzuki, Toyoaki and Watanabe, Kentaro},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication: Proceedings of the SPICA Science Conference from Exoplanets to Distant Galaxies: SPICA's New Window on the Cool Universe},
 month = {Mar},
 note = {SPICA Science Conference from Exoplanets to Distant Galaxies: SPICA's New Window on the Cool Universe (June 18-21, 2013. Ito Hall, the University of Tokyo), Bunkyou-ku, Tokyo, Japan, We present our recent activities on the development of new Ge photoconductors for far-infrared (far-IR) astronomy. Using the surface-activated wafer bonding (SAB) method provided by Mitsubishi Heavy Industries, we fabricated a Ge p+-i p+-i junction device with clean abrupt junction, which basically possesses a Blocked-Impurity-Band-type (BIB-type) structure. We measured the far-IR sensitivity of the device at 1.7K using a blackbody source and spectral response curves at 2.8K using a Fourier transform spectrometer. The device shows considerably higher sensitivity and wider spectral coverage than a conventional bulk Ge:Ga device, demonstrating promising applicability of SAB Ge p+-i junction devices to BIB-type Ge detectors., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA1730027090, レポート番号: JAXA-SP-17-010E},
 pages = {407--409},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Development of Far-Infrared Germanium Photoconductors with Surface Activated Wafer Bonding Technology},
 volume = {JAXA-SP-17-010E},
 year = {2018}
}