{"created":"2023-06-20T15:03:26.022789+00:00","id":32643,"links":{},"metadata":{"_buckets":{"deposit":"947c3b2f-17da-4645-8680-34104afb65f7"},"_deposit":{"created_by":1,"id":"32643","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"32643"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00032643","sets":["1887:1890","1896:1898:1899:1910"]},"author_link":["410520","410521","410522","410519"],"item_9_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Material Design of Semiconductors for Electronic Devices used under Inordinary Conditions (II)"}]},"item_9_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1981-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1_B","bibliographicPageEnd":"544","bibliographicPageStart":"531","bibliographicVolumeNumber":"17","bibliographic_titles":[{"bibliographic_title":"東京大学宇宙航空研究所報告"}]}]},"item_9_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"クラスタモデルを用いて,III-V族化合物半導体混晶のフォノンスペクトルの解析と混晶の過剰自由エネルギーΔG^<ex>の計算を行った.ΔG^<ex>は,原子のランダムな配列からのずれを示すクラスタリングパラメタβの函数である.ΔG^<ex>が最小になるβの値β_sは,相対的な格子定数の差Δa/a^^^-が増加するとともに増加し,組成比xが0.5のとき最大値をとる.Partly-two modeのフォノンスペクトルを示す様な混晶において,フォノン周波数の実験値から求めたβの値β_<ph>は.やはりx=0.5で最大値を示す.(AlGa)-Vの様なTwo modeを示す混晶では,x=0.5におけるβ_sと全組成範囲におけるβ_<ph>の値はゼロである.","subitem_description_type":"Abstract"}]},"item_9_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The excess free energy of mixing, ΔG^<ex>, was calculated and the phonon spectra for III-V pseudobinary alloys A_<1-x>B_xC were analyzed on the basis of a cluster model. ΔG^<ex> is a function of the clustering parameter β which represents the deviation from the random atomic distribution. The value of β giving the minimum excess free energy, β_s, takes the maximum value at x=0.5 and it increases with increase in the relative difference of lattice constants, Δa/a^^^-. The value of β giving the best agreement between the measured phonon frequencies and the calculated ones, β_<ph>, takes the maximum value also at about x=0.5 in systems exhibiting the phonon spectra of partly-two mode type. The value of β_s at x=0.5 and β_<ph> over the entire composition range were zero for two-mode systems, such as (AlGa)-V.","subitem_description_type":"Other"}]},"item_9_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: SA0125984000","subitem_description_type":"Other"}]},"item_9_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"東京大学宇宙航空研究所"}]},"item_9_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0563-8100","subitem_source_identifier_type":"ISSN"}]},"item_9_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00161914","subitem_source_identifier_type":"NCID"}]},"item_9_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京大学宇宙航空研究所"},{"subitem_text_value":"東京大学宇宙航空研究所"}]},"item_9_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Institute of Space and Aeronautical Science, University of Tokyo"},{"subitem_text_language":"en","subitem_text_value":"Institute of Space and Aeronautical Science, University of Tokyo"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"岸, 眞人"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"河東田, 隆"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"KISHI, Masato","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"KATODA, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-24"}],"displaytype":"detail","filename":"SA0125984.pdf","filesize":[{"value":"575.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"SA0125984.pdf","url":"https://jaxa.repo.nii.ac.jp/record/32643/files/SA0125984.pdf"},"version_id":"6d0a32f3-9dfe-4ba8-87c0-cb4cbbee0085"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"<論文>特殊環境用電子デバイス材料の設計と作成・評価(II)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"<論文>特殊環境用電子デバイス材料の設計と作成・評価(II)"}]},"item_type_id":"9","owner":"1","path":["1890","1910"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"32643","relation_version_is_last":true,"title":["<論文>特殊環境用電子デバイス材料の設計と作成・評価(II)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T00:27:16.626280+00:00"}