@inproceedings{oai:jaxa.repo.nii.ac.jp:00038782,
 author = {中村, 徹哉 and 今泉, 充 and 佐藤, 真一郎 and 菅谷, 武芳 and 望月, 透 and 岡野, 好伸 and 大島, 武 and Nakamura, Tetsuya and Imaizumi, Mitsuru and Sato, Shinichiro and Sugaya, Takeyoshi and Mochizuki, Toru and Okano, Yoshinobu and Oshima, Takeshi},
 book = {Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet)},
 month = {Nov},
 note = {11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA) (November 11-13, 2015. City Performing Arts Center), Kiryu, Gunma, Japan, The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in i-layer was investigated. In previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by decrease of the carrier collection efficiency in depletion region due to proton damage., 資料番号: AC1600040000},
 pages = {73--76},
 publisher = {日本原子力研究開発機構(JAEA) : 宇宙航空研究開発機構(JAXA) : 群馬大学, Japan Atomic Energy Agency (JAEA) : Japan Aerospace Exploration Agency (JAXA) : Gunma University},
 title = {Measurement of Ion Beam Induced Current in Quantum Dot Solar Cells},
 year = {2015}
}