@inproceedings{oai:jaxa.repo.nii.ac.jp:00038786,
 author = {柴田, 優一 and 今泉, 充 and 佐藤, 真一郎 and 大島, 武 and 大岡, 幸代 and 高本, 達也 and Shibata, Yuichi and Imaizumi, Mitsuru and Sato, Shinichiro and Oshima, Takeshi and Ooka, Sachiyo and Takamoto, Tatsuya},
 book = {Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet)},
 month = {Nov},
 note = {11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA) (November 11-13, 2015. City Performing Arts Center), Kiryu, Gunma, Japan, Radiation response is one of the important properties for space solar cells. It should be well understood so as to accurately predict their degradation in orbit and also to improve their radiation tolerance. Recently, a phenomenon, recovery from the radiation degradation by light soaking, on inverted metamorphic (IMM) triple-junction (3J) solar cells was found out. In this work, the light soaking annealing effects on electron irradiated IMM 3J solar cells are reported. IMM 3J solar cells irradiated with 1 MeV electrons with the fluence of 3×10(exp 15) e(-) /cm2 showed the recovery of open-circuit voltage, Voc, up to 43 mV after light (AM0, 1 sun) soaking of 3 hours. The increment of the electroluminescence intensity for InGaP in the IMM 3J cells due to the light soaking suggests that the Voc recovery occurs in InGaP top-cell rather than GaAs middle-cell or InGaAs bottom-cell., 資料番号: AC1600044000},
 pages = {65--68},
 publisher = {日本原子力研究開発機構(JAEA) : 宇宙航空研究開発機構(JAXA) : 群馬大学, Japan Atomic Energy Agency (JAEA) : Japan Aerospace Exploration Agency (JAXA) : Gunma University},
 title = {Recovery of Radiation Degradation on Inverted Metamorphic Triple-Junction Solar Cells by Light Soaking},
 year = {2015}
}