@inproceedings{oai:jaxa.repo.nii.ac.jp:00039537,
 author = {川北, 史朗 and 今泉, 充 and 石塚, 尚吾 and 柴田, 肇 and 仁木, 栄 and 奥田, 修一 and 艸分, 宏昌 and Kawakita, Shirou and Imaizumi, Mitsuru and Ishizuka, Shogo and Shibata, Hajime and Niki, Shigeru and Okuda, Shuichi and Kusawake, Hiroaki},
 book = {MRS Online Proceedings Library},
 month = {},
 note = {2013 MRS Spring Meeting (April 1-5, 2013.), San Francisco, California, United States., CIGS solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cell, to reveal the radiation defect. The EL image of CIGS solar cells before electron irradiation at 120 K described small grains, thought to be those of the CIGS. After 250 keV electron irradiation of the CIGS cell, the cell was uniformly illuminated compared to before the electron irradiation and the observed grains were unclear. In addition, the EL intensity rose with increasing electron fluence, meaning the change in EL efficiency may be attributable to the decreased likelihood of non-irradiative recombination in intrinsic defects due to electron-induced defects. Since the light soaking effect for CIGS solar cells is reported the same phenomena, the 250 keV electron radiation effects for CIGS solar cells might be equivalent to the effect., 資料番号: PA1410047000},
 publisher = {Materials Research Society},
 title = {Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin-Film Solar Cells using Electroluminescence},
 volume = {1538},
 year = {2013}
}