{"created":"2023-06-20T15:10:07.882318+00:00","id":39724,"links":{},"metadata":{"_buckets":{"deposit":"a2be2a3d-c057-49d3-b0e0-39e767da8010"},"_deposit":{"created_by":1,"id":"39724","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"39724"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00039724","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["500111","500116","500119","500113","500120","500118","500106","500109","500115","500110","500121","500112","500108","500107","500117","500114"],"item_3_alternative_title_2":{"attribute_name":"その他のタイトル(英)","attribute_value_mlt":[{"subitem_alternative_title":"Uniform dispersion and mixing of molten multicomponent compound semiconductor (Marangoni)"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-03-15","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"270","bibliographicPageStart":"259","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告"},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"自由界面上の濃度差により発生するマランゴニ対流を活用することにより、化合物半導体の均一混合化技術を確立することを目的として、濃度勾配により生じる真のマランゴニ対流を明らかにし、化合物半導体融液の相互分子拡散係数を求め、さらにマランゴニ対流による混合と分子拡散のみによる混合とを比較するために、地上および微小重力下において、In-Sb(M-1, D-1)とIn-GaSb-Sb(M-2, M-3,M-3', D-2)の計6個の試料を急速に溶融、冷却した。In-Sb系の場合、宇宙で成長した試料について、M-1はほとんど球形であり、またM-1とD-1の双方とも溶融時間が長かったために混合した。一方、地上で成長したD-1は、重力偏折のために、Inの濃度が下方に向かう増加がみられた。均一な濃度分布を持つ結晶は微小重力下で得られることが確認された。In-GaSb-Sb系の場合、宇宙で成長した試料について、M試料は、完全な球形ではないが、丸みを帯びた。Sb側の形状はIn側と比べより収縮した状態となった。結晶中の濃度分布はほとんど均一であった。一方、宇宙で成長したD-2試料の濃度分布は均一でなく、拡散過程が進行していた。濃度差によるマランゴニ対流の活用は、多元系化合物半導体の混合に対し、非常に有効であることが判明した。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"In order to develop a new technique for uniform mixing of the compound semiconductors utilizing Marangoni convection due to the concentration difference on the free interface, and to clarify the real Marangoni convection induced by concentration gradient, to obtain counter molecular diffusivity of molten compound semiconductors, and to compare mixing by Marangoni convection with that by molecular diffusion only, 6 type of samples composed of In-Sb (M-1, D-1) and In-GaSb-Sb (M-2, M-3, M-3', D-2) were melted and cooled rapidly under normal and microgravity. In case of In-Sb system, for space grown samples, M-1 samples was almost sphere, and both M-1 and D-1 were mixed because of long dissolution time. On the other hand, D-1 samples grown on the ground, In concentration increased downward because of gravity segregation. It was confirmed that the crystal with uniform concentration distribution can be obtained under microgravity conditions. In case of In-GaSb-Sb system, for space grown samples, M samples became round although they were not complete sphere. The shape of Sb side was more shrunk compared with that of the In side. The concentration distribution in the crystal was almost uniform. On the other hand, the concentration distribution of D-2 samples grown in space was not uniform and diffusion process was on the way. It was pointed out that the utilization of Marangoni convection due to the concentration difference is very useful for the mixing of multicomponent compound semiconductor.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0000271015","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-960004","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者(英)","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"早稲田大学 理工学部"},{"subitem_text_value":"九州大学機能物質科学研究所"},{"subitem_text_value":"静岡大学電子工学研究所"},{"subitem_text_value":"静岡大学電子工学研究所"},{"subitem_text_value":"静岡大学 工学部"},{"subitem_text_value":"早稲田大学 理工学部"},{"subitem_text_value":"早稲田大学 理工学部"},{"subitem_text_value":"早稲田大学 理工学部"}]},"item_3_text_7":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Waseda University School of Science and Engineering"},{"subitem_text_language":"en","subitem_text_value":"Institute of Advanced Material Study, Kyushu University"},{"subitem_text_language":"en","subitem_text_value":"Research Institute of Electronics, Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Research Institute of Electronics, Shizuoka University"},{"subitem_text_language":"en","subitem_text_value":"Shizuoka University Faculty of Engineering"},{"subitem_text_language":"en","subitem_text_value":"Waseda University School of Science and Engineering"},{"subitem_text_language":"en","subitem_text_value":"Waseda University School of Science and Engineering"},{"subitem_text_language":"en","subitem_text_value":"Waseda University School of Science and Engineering"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"平田, 彰"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"今石, 宣之"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"熊川, 征司"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"早川, 泰弘"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岡野, 泰則"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大坂, 敏明"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"橘, 正人"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"西澤, 伸一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirata, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Imaishi, Nobuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kumagawa, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hayakawa, Yasuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Okano, Yasunori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Osaka, Toshiaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tachibana, Masato","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nishizawa, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"00271015.pdf","filesize":[{"value":"854.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"00271015.pdf","url":"https://jaxa.repo.nii.ac.jp/record/39724/files/00271015.pdf"},"version_id":"498b1be5-8aa5-43a9-aa23-eac086a0423f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"多元系化合物半導体融液","subitem_subject_scheme":"Other"},{"subitem_subject":"均一分散化","subitem_subject_scheme":"Other"},{"subitem_subject":"均一混合化","subitem_subject_scheme":"Other"},{"subitem_subject":"マランゴニ対流","subitem_subject_scheme":"Other"},{"subitem_subject":"自由界面","subitem_subject_scheme":"Other"},{"subitem_subject":"分子拡散","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"In-Sb","subitem_subject_scheme":"Other"},{"subitem_subject":"In-GaSb-Sb","subitem_subject_scheme":"Other"},{"subitem_subject":"重力偏折","subitem_subject_scheme":"Other"},{"subitem_subject":"宇宙実験","subitem_subject_scheme":"Other"},{"subitem_subject":"molten multicomponent compound semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"uniform dispersion","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"uniform mixing","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Marangoni convection","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"free interface","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"molecular diffusion","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"In Sb","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"In GaSb Sb","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gravity segregation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"space experiment","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"多元系化合物半導体融液の均一分散・混合化(MARANGONI)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"多元系化合物半導体融液の均一分散・混合化(MARANGONI)"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"39724","relation_version_is_last":true,"title":["多元系化合物半導体融液の均一分散・混合化(MARANGONI)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:29:35.967176+00:00"}