{"created":"2023-06-20T15:11:05.617221+00:00","id":40672,"links":{},"metadata":{"_buckets":{"deposit":"3c6cde6b-4cba-44c8-828c-5970aa57f4d4"},"_deposit":{"created_by":1,"id":"40672","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"40672"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00040672","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["500965","500966","500963","500962","500967","500969","500964","500968"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"傾斜濃度法によるIn(1-x)Ga(x)Sb均一組成結晶の育成"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"18","bibliographicPageStart":"13","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告"},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"微小重力において10(exp -3)gないし10(exp -4)g程度の残留加速度の存在下で、均質な混合結晶をその溶融液から得るための新しい結晶成長法を提案した。毛細管を用いて地上ベースで予備的な実験を行い、この方法の正当性を示す結果を得た。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"A new crystal growth method is proposed. The method is for obtaining homogeneous mixed crystals from their melts in the presence of residual acceleration of the order of 10(exp -3)g to 10(exp -4 )g in microgravity. The preliminary ground-based experiments using capillary tubes show the validity of this method.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0002208001","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-990006E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"日本電信電話 物性科学基礎研究所"},{"subitem_text_value":"宇宙開発事業団"},{"subitem_text_value":"宇宙開発事業団"},{"subitem_text_value":"宇宙開発事業団"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Nippon Telegraph and Telephone Corporation Basic Research Laboratories"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"加藤, 浩和"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"松本, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 真一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato, Hirokazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsumoto, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"02208001.pdf","filesize":[{"value":"403.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"02208001.pdf","url":"https://jaxa.repo.nii.ac.jp/record/40672/files/02208001.pdf"},"version_id":"37e2875e-a9bf-43f2-9561-56d1d035d5bf"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"均質結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"In(1-x)Ga(x)Sb","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"残留加速度","subitem_subject_scheme":"Other"},{"subitem_subject":"傾斜溶質濃度","subitem_subject_scheme":"Other"},{"subitem_subject":"毛細管","subitem_subject_scheme":"Other"},{"subitem_subject":"地上実験","subitem_subject_scheme":"Other"},{"subitem_subject":"濃度プロフィル","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"homogeneous crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"In(1-x)Ga(x)Sb","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"residual acceleration","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"graded solute concentration","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"capillary tube","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"ground based experiment","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"concentration profile","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Growth of homogeneous In(1-x)Ga(x)Sb crystals by the graded solute concentration method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Growth of homogeneous In(1-x)Ga(x)Sb crystals by the graded solute concentration method","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"40672","relation_version_is_last":true,"title":["Growth of homogeneous In(1-x)Ga(x)Sb crystals by the graded solute concentration method"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:28:14.280035+00:00"}