{"created":"2023-06-20T15:11:05.667704+00:00","id":40673,"links":{},"metadata":{"_buckets":{"deposit":"a6276145-966e-47fb-8a9d-b5f88b76b13b"},"_deposit":{"created_by":1,"id":"40673","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"40673"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00040673","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["500971","500974","500970","500975","500973","500972"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"1次元および2次元数値解析によるIn(x)Ga(1-x)As成長条件"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"26","bibliographicPageStart":"19","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告"},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"InAs-GaAsの2元半導体の1次元的結晶成長について計算手法を開発し、冷却速度と温度勾配が結晶成長プロセスに及ぼす影響を検討した。溶液中に不均一な濃度勾配を有する一方向成長法でも、成長速度が3ないし5mm/hの場合には均一な組成の結晶を成長させ得ることがわかった。さらに、組成的過冷却の発生について研究し、温度勾配が30K/cmより高い場合に過冷却度を減少させ得ることがわかった。また、InAs-GaAsの2元半導体の2次元的結晶成長の計算手法を開発し、残留重力とアンプル傾斜角が結晶成長プロセスに及ぼす影響を検討した。その結果、次のことがわかった。対流は10(exp -6)gの条件でも発生し、結晶と溶液の界面は対流によって変形する。成長方向が重力の方向と反対の場合には、対流は減少し拡散条件はほぼ完全に実現できる。成長方向が重力に垂直の場合には、対流は非常に強くなる。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"A calculation method of one-dimensional crystal growth of InAs-GaAs binary semiconductors was developed, and the effect of the cooling rate and the temperature gradient on the crystal growth process were investigated. It was found that crystals of uniform composition can be grown by the one-directional growth method with a nonuniform concentration gradient in the solution if the growth rate is 3 to 5 mm/h. Furthermore, the occurrence of constitutional supercooling was investigated. It was found that the degree of supercooling can be reduced if the temperature gradient is higher than 30 K/cm. A calculation method of two-dimensional crystal growth of InAs-GaAs binary semiconductors was also developed, and the effect of residual gravity and the inclination of ampoule on the crystal growth process was investigated. It was found that convection is induced even under 10(exp -6)g conditions, and the crystal-solution interface is deformed by the convection. Convection is reduced and diffusion conditions can be almost realized if the growth direction is opposite to gravity. Convection becomes quite strong when the growth direction is perpendicular to gravity.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0002208002","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-990006E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東洋大学"},{"subitem_text_value":"東洋大学"},{"subitem_text_value":"宇宙開発事業団"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Toyo University"},{"subitem_text_language":"en","subitem_text_value":"Toyo University"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"前川, 透"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"平岡, 良章"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"松本, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maekawa, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hiraoka, Yoshiaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsumoto, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"02208002.pdf","filesize":[{"value":"481.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"02208002.pdf","url":"https://jaxa.repo.nii.ac.jp/record/40673/files/02208002.pdf"},"version_id":"fad36b8b-89df-45da-9ff2-d5d3eb933010"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"In(x)Ga(1-x)As","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"冷却速度","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"濃度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"成長速度","subitem_subject_scheme":"Other"},{"subitem_subject":"組成的過冷却","subitem_subject_scheme":"Other"},{"subitem_subject":"残留重力","subitem_subject_scheme":"Other"},{"subitem_subject":"成長方向","subitem_subject_scheme":"Other"},{"subitem_subject":"In(x)Ga(1-x)As","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"cooling rate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"concentration gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth rate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"constitutional supercooling","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"residual gravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth direction","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"One and two dimensional analyses of growth conditions of In(x)Ga(1-x)As","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"One and two dimensional analyses of growth conditions of In(x)Ga(1-x)As","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"40673","relation_version_is_last":true,"title":["One and two dimensional analyses of growth conditions of In(x)Ga(1-x)As"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:28:12.581222+00:00"}