@techreport{oai:jaxa.repo.nii.ac.jp:00040675,
 author = {長島, 敏夫 and 加藤, 浩和 and 才田, 豊 and 佐藤, 輝仁 and 木下, 恭一 and Nagashima, Toshio and Kato, Hirokazu and Saita, Yutaka and Sato, Teruhito and Kinoshita, Kyoichi},
 month = {Sep},
 note = {結晶を成長させるときに使用できる坩堝材料を特定するために、黒鉛、BN、SiO2、pBN、AlN、SiC、およびAl2O3の基板上における溶融In(0.8)Ga(0.2)Asの濡れ挙動と表面張力を、成長溶融液滴法を用いて測定した。溶融液と基板間の接触角の大小関係は、pBN、BN、黒鉛>AlN>SiN>SiO2>Al2O3、SiCであった。In(0.8)Ga(0.2)Asの表面張力は、1,100〜1,300度Cにおいてγ=418〜480mN/mであった。SiO2容器の表面粗度の影響を0.1から4マイクロメートルの範囲で検討した。その結果、溶融InGaAsと容器の濡れ挙動は容器の表面粗度と関係があることがわかった。, Wetting behavior of molten In(0.8)Ga(0.2)As on substrates of graphite, BN, SiO2, pBN, AlN, SiC and Al2O3, and the surface tension of molten In(0.8)Ga(0.2)As were measured using the growing melt drop method so as to identify a possible crucible material for use in growing crystals. The relationship of the magnitude of the contact angles between the melts and the substrates was as follows: the angles of pBN, BN, and graphite were the largest, and those of others were in the order of AlN, SiN, SiO2, and Al2O3. The angles of SiC were almost the same as Al(2)O3. The surface tension of In(0.8)Ga(0.2)As was gamma = 418 to 480 mN/m (at 1,100 to 1,300 C). The effect of roughness of the SiO2 container was investigated from 0.1 to 4 micrometer amplitude of surface. As a result, the molten InGaAs/container wetting behavior was related to the roughness of the container., 資料番号: AA0002208004, レポート番号: NASDA-TMR-990006E},
 title = {Wettability and surface tension of molten InGaAs},
 year = {1999}
}