{"created":"2023-06-20T15:11:05.910609+00:00","id":40678,"links":{},"metadata":{"_buckets":{"deposit":"6b08e6bb-52f5-4044-8e99-6632f593388a"},"_deposit":{"created_by":1,"id":"40678","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"40678"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00040678","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["501016","501015","501011","501012","501010","501014","501017","501013"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"InAs濃度勾配を有するInGaAs原料の調整"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-09-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"56","bibliographicPageStart":"51","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告"},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"成分プロフィルを制御したIn(x)Ga(1-x)As多結晶を調製することを、通常の一方向凝固を用いつつ組成的過冷却を発生させることなく実現することができた。成長界面において40K/cmの高い温度勾配を設けることにより、成長速度を0.62mm/hまで減らした状態で組成的過冷却を抑制することに成功した。組成的過冷却にある溶融体からの結晶成長において組成が周期的に変動することから、過冷却度は成長界面の前面で最大であり、その場所で核形成と成長が急激に起こっていると推察することができる。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Preparation of In(x)Ga(1-x)As polycrystals having a controlled compositional profile can be realized without occurrence of the constitutional supercooling by using normal directional solidification. Under a high temperature gradient of 40 K/cm at the growth interface, the constitutional supercooling has been successfully suppressed by reducing the growth rate to 0.62 mm/h. From the periodic fluctuation of the composition in the crystal grown from the constitutional supercooling melt, it is supposed that the degree of the supercooling becomes maximum in front of the growth interface, where nucleation and growth occur abruptly.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0002208007","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-990006E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"住友電気工業 半導体材料研究部"},{"subitem_text_value":"住友電気工業 伊丹研究所"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究センター"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究センター"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Sumitomo Electric Industries Ltd Semiconductor Division"},{"subitem_text_language":"en","subitem_text_value":"Sumitomo Electric Industries Ltd Itami Research Laboratories"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Center"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Center"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"橋尾, 克司"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"龍見, 雅美"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"加藤, 浩和"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hashio, Katsushi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tatsumi, Masami","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato, Hirokazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"02208007.pdf","filesize":[{"value":"1.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"02208007.pdf","url":"https://jaxa.repo.nii.ac.jp/record/40678/files/02208007.pdf"},"version_id":"16ca9997-1748-4c0c-962a-d798398bae1a"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"InGaAs","subitem_subject_scheme":"Other"},{"subitem_subject":"傾斜濃度","subitem_subject_scheme":"Other"},{"subitem_subject":"成分プロフィル","subitem_subject_scheme":"Other"},{"subitem_subject":"一方向凝固","subitem_subject_scheme":"Other"},{"subitem_subject":"組成的過冷却","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"成長速度","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"核形成","subitem_subject_scheme":"Other"},{"subitem_subject":"成長界面","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gradient concentration","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"compositional profile","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"directional solidification","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"constitutional supercooling","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth rate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"nucleation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth interface","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Preparation of InGaAs starting materials with the gradient InAs concentration","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Preparation of InGaAs starting materials with the gradient InAs concentration","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"40678","relation_version_is_last":true,"title":["Preparation of InGaAs starting materials with the gradient InAs concentration"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:28:04.629350+00:00"}